Mosfet 33A 100V

RP. 0

Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 150 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 30 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 72 nC Drain-Source Capacitance (Cd): 2100 pF Maximum Drain-Source On-State Resistance (Rds): 0.077 Ohm Package: TO220