-

RP. 0

Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.625 W Maximum Collector-Emitter Voltage |Vce|: 350 V Maximum Collector Current |Ic max|: 0.3 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 20 MHz Forward Current Transfer Ratio (hFE), MIN: 40 Noise Figure, dB: - Package: TO92