Transistor 4A-1000V

RP. 0

Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 70 W Maximum Collector-Base Voltage |Vcb|: 150 V Maximum Collector-Emitter Voltage |Vce|: 120 V Maximum Emitter-Base Voltage |Veb|: 8 V Maximum Collector Current |Ic max|: 10 A Max. Operating Junction Temperature (Tj): 150 °C Transition Frequency (ft): 10 MHz Collector Capacitance (Cc): 90 pF Forward Current Transfer Ratio (hFE), MIN: 60 Noise Figure, dB: - Package: TO220