Sipmos 5.5A 200V

RP. 0

Type Designator: BUZ73A Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum Power Dissipation (Pd): 40 W Maximum Drain-Source Voltage |Vds|: 200 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 5.5 A Maximum Junction Temperature (Tj): 150 °C Rise Time (tr): 40 nS Drain-Source Capacitance (Cd): 85 pF Maximum Drain-Source On-State Resistance (Rds): 0.6 Ohm Package: PG-TO-220AB