IGBT 60A-900V

RP. 0

IGBT TOSHIBA insulated gate bipolar transistor silicon N-Channel GT60M104 ( 60 Ampere 900 Volt ) High power switching Applications : - High input impedance - High speed : tf = 0.4 us ( Max. ) - Low saturation voltage : VCE ( sat ) = 3.7V ( Max. ) - Enhancement – Mode - Recommended FDR S5J12 - Maximum ratings ( Ta = 25®C )