IGBT 200A-1200V

RP. 0

Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features : - Low Drive Power - Low VCE(sat) - Discrete Super-Fast Recovery Free-Wheel Diode - High Frequency Operation - Isolated Baseplate for Easy Heat Sinking